Emerging as the industry’s first fully qualified SiC MOSFET power devices in bare die or chip form for use in power modules, Cree’s SiC Z-FET MOSFETs and diodes claim to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices. The bare die alternatives allow circuit designers to take full advantage of the switching performance of SiC technology by reducing the effects of the package-parasitic inductance. The MOSFETs are available in two versions: the CPMF-1200-S080B measures 4.08 mm x 4.08 mm and is rated at 1200V/20A with a nominal on resistance of 80 mΩ and the CPMF-1200-S160B measures 3.1 mm x 3.1 mm and is rated at 1200V/10A with a nominal on-resistance of 160 mΩ. Operating junction temperature for both devices is -55°C to +150°C. CREE INC., Durham, NC. (919) 313-5300.