Available in a standard isolated SOT-227 plastic package, IXFN family of power MOSFETs offers blocking voltages of from 70V to 1000V with output currents from 36A to 340A. Using the firm’s HiPerFET process that guarantees high avalanche energy capability and reduced reverse recovery switching time of the body diode, these power FETs can replace low power MOSFETs in TO-247, TO-264 or other SOT-227 packages. On-resistance for the family ranges from 0.004 ohms to 0.240 ohms over the voltage/current range.
Company: IXYS CORP.
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