Providing high efficiency in boost conversion circuits, the FDFME3N311ZT boost switch combines a 30V N-channel PowerTrench MOSFET and a Schottky diode to keep input capacitance down to 55 pF typical and maintain a total gate charge of 1 nC. The device measures 1.6 mm x 1.6 mm x 0.55 mm in a MicroFET thin package, offering a 36% space savings over prior boost switches. In applications such as cell phones, it offers a 30V breakdown voltage to drive up to seven or eight white LEDs depending on the LEDs selected and design guard band. Price for the FDFME3N311ZT is $0.25 each/1,000. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (800) 341-0392.
Company: FAIRCHILD SEMICONDUCTOR
Product URL: Click here for more information