Third in a series of infrared (IR) LEDs, the OD-850L liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) IR emitters feature a medium emission angle for optimum coverage. Similar to the recently introduced OD850W (wide angle emission) and the OD-850N (narrow angle emission) IR LEDs, the OD-850L is designed to replace the company’s current OD-880L (medium emission angle) device. Output power is nearly 50% more with less degradation and higher stability than the legacy devices. In addition, the new 850nm wavelength is also better matched to photo transistors and opto ICs. OPTO DIODE CORP., Newbury Park, CA. (805) 499-0335.