El Segundo, Calif., U.S.: Two new lead-free enhancement-mode gallium-nitride on silicon (eGaN) FETs from Efficient Power Conversion comply with the European Union’s Restrictions on Hazardous Substances (RoHS).
The EPC2001 is a 100-VDS FET with a maximum on resistance (RDS(ON)) of 7 mΩ with 5 V applied to the gate. The EPC2015 is a 40-VDS FET with a maximum RDS(ON) of 4 mΩ. Both eGaN FETs provide performance advantages over similar state-of-the-art silicon-based power MOSFETs, claims the company.
Applications that benefit from eGaN FET performance increases include dc-dc power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, and telecom basestations.
Efficient Power Conversion Corp.