EE Product News

256-Mb SDRAMs Are Made Using 0.20-µm Technology

The delivery of the firm's 0.20-µm, 256-Mbit SDRAM samples to IBM's Memory Technology & Qualification group is expected, in turn, to lead to the commercial introduction of 0.175-µm, 256-Mbit SDRAMs by Q4 of 1999. Immediate applications include very high-end servers and mainframes where high density is critical. Designated the TC59SM816, TC59SM808 and TC59SM804, the new 256-Mbit SDRAMs are organized 4M x 16 bits x 4 banks, 8M x 8 bits x 4 banks, and 16M x 4 bits x 4 banks, respectively. They feature 100-, 125- or 133-MHz operating frequencies, have an LVTTL interface, and operate from a single 3.3V power supply with a 0.3V tolerance. The devices are housed in 54-pin, 400 mil TSOP type II packages.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)

Product URL: Click here for more information

TAGS: Digital ICs
Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish