The asynchronous UTXQ512 4-Mbit SRAMs are designed for space-borne applications. The 512k x 8 memories withstand total dose exposure up to 30 krad(Si) and 100 krad(Si) in a shielded environment for all space orbits. They’re immune to charge particle-induced latchup when exposed to particles of 128MeV-cm2/mg.The memories are compatible with industry-standard 512k x 8 SRAMs. Two versions are offered: the UT7Q512 has a 100-ns maximum address access time with 5V supply, while the UT8Q512 device offers a 25-ns maximum address access time with a 3V supply. They’re packaged in 32-lead (7Q) and 36-lead (8Q) ceramic flatpacks and will be QML T-compliant pending DSCC approval.
Company: UTMC MICROELECTRONIC SYSTEMS INC.
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