Compared to its existing 288 Mb low-latency DRAM, the company’s latest family of 576-Mb low-latency DRAM devices offer doubled memory capacity, 25% better random cycle performance for high-speed reading/writing, 33% faster operating frequency, and a better-than 10% reduction in power consumption. Leveraging high-speed sense-amplifier technology and low-power memory technology, random cycle performance during high-speed reading and writing is 15 ns. Though the memory capacity is double, the 576 Mb products use the same package measuring 11 mm x 18.5 mm as existing 288-Mb low-latency DRAM. Samples of the 576 Mb low-latency DRAM products are available for $60 each. RENESAS TECHNOLOGY AMERICA INC., San Jose, CA. (408) 382-7407.