Developed in 2010, Samsung is now producing what it calls the industry’s first 4-Gb, low power double-data-rate 2 (LPDDR2) DRAM using 30-nm class technology. Compared to previous 40-nm 2-Gb LPDDR2 DRAM, the 30nm-class 4 Gb LPDDR2 DRAM increases productivity by 60%. It delivers a data transmission speed of 1,066 Mb/s, reportedly more than double that of today’s MDDR operating between 333 to 400 Mb/s. In addition, the 4-Gb chip enables a thinner memory solution. SAMSUNG ELECTRONICS CO. LTD., San Jose, CA. (800) 726-7864.