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Nand Flash Device Houses Up To 1 Gb Of Memory

A new 1-Gb multi-level-cell (MLC) EEPROM is said to represent an industry benchmark as the highest density NAND chip currently available using MLC technology. Co-developed with SanDisk Corp., the device is manufactured using 0.16-m technology and is based on MLC technology, which allows two bits of data to be stored in one memory cell, effectively doubling memory capacity.The result is more data storage for less money, making the device ideal for consumer applications such as digital cameras, cellular telephones and PDAs, as well as streaming audio/video equipment, and other emerging markets for flash memory technology. Sample quantities of the MLC NAND are available now, priced at $80 each. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC), Irvine, CA. (949) 455-2000.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)

Product URL: Click here for more information

TAGS: Digital ICs
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