EE Product News

New Flash Family Embraces Low And Super-Low Voltage Parts

Operating voltages as low as 1.8V and a dual-bank, simultaneous read/write architecture characterize a new family of flash memories targeted at cell phones, set-top boxes, PDAs, telecomm equipment, and other consumer and industrial products. Presently offered in 16-Mbit versions having a 2M x 8 or 1M x 16 organization, the HY29DS162/163 super-low-voltage flash memories operate from a 1.8VCC-2.2VCC supply, while HY29DL162/163 low-voltage parts require 2.7VCC-3.6VCC. Program/erase current specs for both sets of devices is only 10 mA, and access times are 100 or 120 ns for the former and 70, 90 or 120 ns for the latter.
The flash devices' boot-block sector architecture employs 39 memory sectors in two banks for fast in-system code changes, plus a 64-Kbyte sector for security purposes. The dual bank design allows the host system to program or erase in one bank, while simultaneously reading from any sector in the other bank, resulting in zero latency between read and write operations. By storing operating code in one bank and data in the other, there is no need to interrupt reading of the operating code to perform data programming or erase operations.
Capable of being permanently locked either at the factory or by customers, the memories' 64-KB secured sector can be used, for example, to store a unique serial number in cell phones or set-top boxes as an anti-cloning measure. The devices also offer sector protection features-- e.g., a sector can be locked to prevent it from being erased-- as well as algorthms that automatically erase any combination of sectors or the entire chip.
The flash devices come in 48-lead TSOP or FBGA packages, with 120-ns HY29DS162/163 and 90-ns HY29DL162/163 TSOPs costing $16.95 each/10K.

Company: HYUNDAI ELECTRONICS AMERICA - Flash Memory Division

Product URL: Click here for more information

TAGS: Digital ICs
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