Langen, Germany: Fujitsu finalised its migration from 0.35 to 0.18µm with the launch of a 0.18µm-based Serial Peripheral Interface ferroelectric RAM (SPI FRAM). FRAM combines the advantages of fast writing SRAM with nonvolatile flash into one device.
The new MB85RSxxx SPI FRAM family comprises the MB85RS256A, MB85RS128A, and MB85RS64A. They feature density levels of 256kb, 128kb, and 64kb, respectively. All devices operate at a voltage range between 3.0 and 3.6V, and provide an endurance of 10 billion write/read cycles as well as data retention of 10 years at 55°C.
Operating frequency was increased to 25MHz max. Since FRAM products render voltage boosters unnecessary for the writing process, they’re well-suited for low-power applications.
The MB85RSxx devices come in 8-pin plastic SOP packages with standard memory pin assignment, which are fully compatible with EEPROM devices.