Asymmetric Dual-TrenchFET MOSFET Lowers On-Resistance By 57%

Asymmetric Dual-TrenchFET MOSFET Lowers On-Resistance By 57%

Vishay Intertechnology says its 30-V asymmetric dual-TrenchFET power MOSFET, housed in the PowerPAIR 3- by 3-mm package, offers 57% lower on-resistance, up to 25% higher power density, and 5% higher efficiency than previous generations in this package size. The SiZ340DT leverages TrenchFET Gen IV technology to boost density while reducing RDS(on) without significantly increasing gate charge. Thus, it minimizes conduction losses and cuts power loss for higher power output. On-resistance for the device’s low-side Channel 2 MOSFET measures 5.1 mΩ at a 10-V gate drive and 7.0 mΩ at 4.5 V, while the high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V. Gate charge is 10.1 nC and 5.6 nC, respectively. The overall lower on-resistance times gate charge reduces conduction and switching losses to improve total system efficiency, leading to cooler operation or increased power density. Applications include synchronous buck designs for cloud-computing infrastructures, servers, telecom equipment, and client-side electronic devices and mobile computing.

VISHAY INTERTECHNOLOGY INC.

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