Electronic Design
2nd Gen SiC MOSFET Delivers Twice the Amps Per Dollar

2nd Gen SiC MOSFET Delivers Twice the Amps Per Dollar

Second generation 1200 V SiC MOSFET boasts an industry-leading power density and switching efficiency at half the cost per amp of the previous generation MOSFETs.

The C2M0080120D is Cree’s second generation 1200 V SiC MOSFET boasting an industry-leading power density and switching efficiency at half the cost per amp of Cree’s previous generation MOSFETs. The high performance of the SiC MOSFETs enables the reduction of required current rating by 50-70% in some high power applications. When properly optimized, customers can get the performance benefits of SiC at cost parity with silicon-based devices. For solar inverters and uninterruptible power supply systems, the efficiency improvement is accompanied by size and weight reductions. In motor drive applications the power density can be more than doubled while increasing efficiency and providing up to twice the maximum torque of similarly rated silicon solutions. The product offering range includes a much larger 25 mΩ die aimed at the higher power module market for power levels above 30 kW. The 80 mΩ MOSFET in a TO-247 package is intended as a lower cost, higher performance upgrade to the first generation CMF20120D. Die are available with ratings of 25 mΩ, intended as a 50 A building block for high power modules, and 80 mΩ.

CREE INC.

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