International Rectifier says its IRFHE4250D FastIRFET dual power MOSFET reduces power losses by more than 5% at 25 A compared to best-in-class conventional power-block devices. The MOSFET features the company’s latest generation silicon and comes in a 6- by 6-mm PQFN package with exposed top for back-side mounting. Its packaging plus strong thermal performance, low on-state resistance, and gate charge boosts power density and lowers switching losses, thus improving overall efficiency. The device is qualified to industrial grade and moisture sensitivity level 2 (MSL2). Targeted 12-V-input dc-dc synchronous buck applications include advanced telecom and netcom equipment, servers, graphic cards, desktops, ultrabooks, and notebook computers.