This 900V power MOSFET uses gate voltage to limit current up to 250 mA. The current limit is set by programming the gate voltage, making the device capable of holding that current up to 900V, depending on temperature and power limitations of the silicon chip and package. The regulated current bias is -7%/+10% at 120 mA. Current shift with temperature is typically less than ±50 ppm/K and dynamic resistance is 125 kiloohms. The device is available in a TO-220 (IXCP01N90E) or a surface-mountable TO-252 (IXCY01N90E) package. Sample quantities are available from stock and production quantities ship in 12 to 16 weeks ARO.
Company: IXYS CORP.
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