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GaAs HBT Process Yields High Efficiency Amp

Incorporating advanced gallium arsenide heterojunction bipolar transistor (GaAs HBT) technology, the RF2172 is offered as a medium-power, high-efficiency 3.6V, 250-mW amplifier IC engineered for use as the final RF amplifier in handheld wireless systems, 902- to 928-MHz ISM band systems, and portable battery powered equipment for consumer applications. Gain is variable from 0-28 dB via analog control, and output power is 24 dBm with 58% efficiency at maximum output. Price is $1.27each/10,000.

Company: RF MICRO DEVICES INC.

Product URL: Click here for more information

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