Designed for use in L- and S-Band transmitter, base station and mobile communications handset applications, the NE651R479A GaAs heterojunction (HJ) FET can be used as a driver for NEC's NE6510179A GaAs HJ FET and NE6500379A GaAs MESFET or as an output device for medium power applications. The new power GaAs HJ FET is said to be capable of delivering 0.4W of output power (CW) with high linear gain, high power added efficiency, and excellent linearity.
At 1.9 GHz, the medium-power NE651R479A HJ FET driver features a POUT of 27 dBm (typical), a GL of 12 dB, and a power added efficiency of 60% at VDS of 3.5V. The device comes housed in a plastic, 4.0 x 4.2-mm surface-mount package especially designed to efficiently dissipate heat and can be shipped on tape-and-reels. Price is $3.88 each in quantities of 100.
Company: CALIFORNIA EASTERN LABORATORIES
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