Electronic Design
High Power SiC Diode Configurations Provide Flexible Options

High Power SiC Diode Configurations Provide Flexible Options

High power SiC diodes offer three configurations in both 600 V, 10 A and 1200 V, 5 A ratings.

IXYS Colorado’s SS150 and SS275 series high power SiC diodes offer three configurations, providing designers with flexible connection and layout options. The three standard internal configurations are TI (triple independent with no common connections), TA (triple Anode with anodes tied together) and TC (triple cathode with cathodes tied together). Each of the new series are also available in both 600 V, 10 A and 1200 V, 5 A ratings. The new high power modules are ideal for applications such as MHz switch mode power supplies, high frequency converters resonant converters and rectifier circuits. The use of silicon carbide allows extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with IXYS’s low inductance RF package, these diodes can be utilized in a number of fast switching diode circuits or high frequency converter applications. Other features of the SS150 and SS275 series SiC diode modules include zero reverse recovery, zero forward recovery, positive temperature coefficient for Vf and low inductance surface mount DE series packaging.

IXYS CORPORATION

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