Düsseldorf, Germany: Toshiba Electronics Europe (TEE) has expanded its family of compact, integrated insulated gate bipolar transistors (IGBTs) with a high-speed switching device that the company says will simplify the design and reduce the component count in cooking appliances and other induction heating applications.
Optimized for voltage resonance inverter switching, the 1200-V, N-channel, “enhancement mode” GT40QR21 comprises an IGBT and a reverse recovery freewheeling diode monolithically integrated into a single, compact device (see the figure). Maximum current ratings are 40 A at 25ºC and 35 A at 100ºC, and the IGBT can operate with extended junction temperatures of up to 175ºC.
The GT40QR21 is designed for very high-speed switching. Typical IGBT fall time (tf) and turn-off time (toff) with a collector current of 40 A are just 0.2 µs and 0.4 µs respectively, while typical reverse recovery time (trr) for the freewheeling diode is 0.6 µs (IF = 15 A). Typical collector-emitter saturation voltage (VCE(sat)) is rated at just 1.9 V (IC = 40 A).
Supplied in a TO-3P(N), TO247-equivalent package, the IGBT measures 15.5 by 20.0 by 4.5 mm and boasts a maximum junction-to-case thermal resistance (Rth(j-c)) of 0.65ºC/W.
Toshiba Electronics Europe