With an enhanced internal matching network that allows operation at 14 to 14.5 GHz, TIM1414-20 GaAs FET is said to offer superior power, gain and efficiency compared with traveling wave tubes and other GaAs devices. With a smaller high-power amplifier (HPA) size, the device allows designs to be simplified and total system costs lowered by reducing parts count. Based on a pseudo-morphic high-electron mobility transistor process technology, this 20W Ku-band device targets solid-state power amplifiers for 14 to 14.5 GHz satellite base station communications transmitters and very small aperture terminals.
Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)
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