Developed for the wireless infrastructure market, the 30W 1920LD30 and 85W 1920LD85 lateral diffusion metal oxide semiconductor transistors(LDMOs) feature gold metalization and ESD protection integrated on the chip. The 30W device has a gain of 11 dB and the 85W transistor delivers 10 dB. Both devices are designed, initially, for the PCS band, supporting CDMA, UMTS, EDGE and GSM designs.
Company: GHZ TECHNOLOGY INC.
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