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Low RDS(on) N-Channel FET Resides In SO-8 Packages

Portable products, including notebook computers, dc-to-dc converters and smart batteries, are the application arena for a new N-channel MOSFET housed in a SO-8 package. Designed as a drop-in replacement for competing Siliconix parts, Si4410DY power FET has an on-resistance of 13.5 milliohms at VGS of 10V and a BVDSS of 30V.

Company: INTERNATIONAL RECTIFIER CORP. (IR)

Product URL: Click here for more information

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