Expanding the company's line of Power Spring products, the NES1823P-70 GaAs MESFET delivers an output of 70W typical with a low thermal resistance of 0.65°C/W. It is said that the lower thermal resistance allows the device to operate at a higher bias current to achieve higher linearity. Being a partially-matched, twin-transistor device, its two sides can be combined externally in either a balanced or push-pull configuration. Other features of this device includes a linear gain of 11 dB, power efficiency of 40% typical, tungsten silicide gates for high reliability, silicon dioxide and nitride passivation for surface stability, and plated heat sinks for reduced thermal resistance. In 100-piece quantities, the NES1823P-70 is priced at $120.
Company: CALIFORNIA EASTERN LABORATORIES
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