The Vishay Siliconix Si8851EDB −20-V, p-channel Gen III power MOSFET, the latest addition to Vishay Intertechnology’s TrenchFET family, will be housed in a 2.4- by 2.0- by 0.4-mm CSP MICRO FOOT package. It offers on-resistance of 8.0 and 11.0 mΩ at −4.5- and −2.5-V gate drives, respectively. According to the company, the smallest comparable device comes in a 2- by 2- by 0.8-mm package, which gives the Si8851EDB a 50% thinner profile with almost half the on-resistance at a 4.5-V gate drive—thus delivering 37% lower on-resistance per package size. As a result, its 0.4-mm profile will suit load and battery switches in power-management applications for tablets, smartphones, and notebooks. Typical electrostatic-discharge (ESD) protection is to 6 kV. The halogen-free device meets JEDEC JS709A and complies with RoHS Directive 2011/65/EU.