Düsseldorf, Germany: Toshiba Electronics Europe expanded its range of small-signal Schottky barrier diodes (SBDs) and single and dual n- and p-channel MOSFETs to complement wireless power-transfer applications. Among the new devices is a MOSFET suited to load switching in a wireless charging transmitter circuit. For example, the 30V SSM6N55NU high-performance dual -channel MOSFET offers a drain current of 4A and maximum on resistance down to 46mΩ, all in a UDFN6 package (measuring 2.0 by 2.0 by 0.75mm).
The single and dual SBDs, rated for reverse voltages of 30V, feature very low forward-voltage ratings down to just 0.45V. Ultra-miniature packaging options range from USC (SOD-323) with dimensions of 2.5 by 1.25 by 0.9mm, to CST2B options that measure 1.2 by 0.8 by 0.6mm. Applications include load switching, low-voltage rectification, bridge circuits, and reverse-current protection.