Providing a low profile and multiple circuit topologies, i.e., independent, dual, in parallel, common collector, and common emitter, Powerex’s split dual SiC MOSFET Modules (QJD1210010 and QJD1210011) are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide transistors with each transistor having a reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate. Rated at 100A/1,200V, shared features of the QJD1210010 and QJD1210011 are a junction temperature of +175°C, low internal inductance, high-speed switching, and two individual switches per module. Sample price for the QJD1210010 is $3,055 each and the QJD1210011 costs $3,175 each. POWEREX INC., Youngwood, PA. (800) 451-1415.