Targeting RF and MHz switching application, the 500V IXFN55N50F, IXFK55N50F, and IXFX55N50F MOSFETs handle up to 55A in SOT227, hole-less TO-247, and TO-264 packages, respectively. These devices have a power rating up to 600W. Rated for 1,000V and 12A, the IXFH12N100F and IXFT12N100F in SMT To-247 and TO-268 packages, respectively, are rated up to 300W. The five devices employ a patented, dual-metal MOSFET structure, said to be responsible for their ability to handle the higher power levels. For further information and prices, contact IXYS CORP., Santa Clara, CA. (408) 982-0700.
Company: IXYS CORP.
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