Designed specifically for high-performance WLAN applications in the 2.4-2.5 GHz frequency band, the RMPA2453-251 power amplifier comes housed in a 16-pin, 3 x 3 x 1 mm package, with internal matching on both input and output to 50?. Manufactured using InGaP heterojunction bipolar transistor technology, the power amp requires a single positive power supply, has two power-saving shutdown options (bias and logic control), and has an integrated power detector with a 20-dB dynamic range, all helping to minimize external component count in new designs. Typical performance for small signal gain is 26 dB, output power at 1 dB compression is 26.5 dBm, EVM is 4% (802.11g, OFDM, 54 Mbps, 19 dBm integrated output power), and modulated output power is greater than 23 dBm with compliance to 802.11b spectral mask requirements. The RMPA2453-251 power amp costs about $1.30 each/1M. More details are available from RAYTHEON RF COMPONENTS, Andover, MA. (978) 684-8900.
Company: RAYTHEON RF COMPONENTS
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