The company’s latest family of 25V and 30V power MOSFETS feature HEXFET MOSFET silicon in a PQFN 3 x 3 package that delivers a high density, reliable and efficient solution for point-of-load (POL) dc/dc converters. The PQFN 3 x 3 package enables up to 60% higher load current capabilities than standard PQFN 3 x 3 devices. The family includes devices optimized for use as control MOSFETs and, for synchronous MOSFET use, devices are available as a FETKY (monolithic FET and Schottky diode) configuration. Pricing for the IRFHM830D begins at US $0.43 each/10,000. For more information, contact Sian Cummins at INTERNATIONAL RECTIFIER CORP., El Segundo, CA. (310) 252-7148.