EE Product News

RF Power LDMOS Transistor Is Low-Voltage Device

Designed for both narrow and wideband data and voice communication, this 7.5V, 6W RF power LDMOSFET surface-mount transistor exhibits 10 dB gain at 500 MHz. It is not internally matched and performs well down to dc. Data sheets, Spice models, and S-Parameters are available at the firm's web site.

Company: POLYFET RF DEVICES

Product URL: Click here for more information

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish