Touting low loss operation, the RJQ6020DPM, RJQ6021DPM, and RJQ6022DPM silicon carbide (SiC) compound power devices incorporate multiple SiC diodes and multiple power transistors in a single package. Each specifies a voltage tolerance of 600V. The RJQ6020DPM device integrates an SiC-SBD and two high-voltage power MOSFETs. Reverse recovery time is 15 ns and on-resistance is 100 mΩ. The RJQ6021DPM device combines an SiC-SBD and two IGBTs required for PFC applications. Reverse recovery time is only 15 ns and the ultra-thin-wafer IGBTs require an on-voltage of 1.5V. The RJQ6022DPM device combines two SiC-SBDs and two IGBTs required for half-bridge circuits in inverters. Reverse recovery time is 15 ns. The ultra-thin-wafer IGBTs deliver an on-voltage of 1.5 V and short circuit time of 6 μs. Samples of the SiC compound power devices are scheduled to begin in February, priced at $10 each. RENESAS TECHNOLOGY AMERICA INC., San Jose, CA. (408) 382-7407.