Electronic Design
SiC Schottky Rectifier/Si IGBT Module Allows 175°C Operation

SiC Schottky Rectifier/Si IGBT Module Allows 175°C Operation

Second generation hybrid mini-module integrates 1200 V/100 Amp SiC Schottky rectifiers with rugged Silicon IGBTs.

GeneSiC’s second generation hybrid mini-module, the GB100XCP12-227, integrates 1200 V/100 Amp SiC Schottky rectifiers with rugged Silicon IGBTs. The performance-price point of the product allows many power conversion applications to benefit from the reduction of the cost/size/weight/volume. Targeted for use in applications such as industrial motors, solar inverters, specialized equipment and power grid applications, the SiC Schottky/Si IGBT mini-module (Co-pack) is made with a Si IGBT that exhibits positive temperature coefficient of on-state drop (1.9 V at 100 A), robust punchthrough design, high temperature operation (175°C Tjmax) and fast switching characteristics that are capable of being driven by commercial, commonly available 15 V IGBT gate drivers. The SiC rectifier allows low inductance packages, low on-state voltage drop and no reverse recovery. The Halogen-Free, RoHS compliant SOT-227 package offers an isolated baseplate, 12 mm low profile design that can be used flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element. The GB100XCP12-227 mini-module is available immediately.

GENESiC SEMICONDUCTOR INC.

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