Boasting of better thermal performance in a smaller footprint, the 1212-8 MOSFETs measure just 10.56 mm2 x 1.0 mm high. With a 6.5A to 9A max. current handling spec, thermal resistance is 1.9¡C/W. The Si7900EDN has an on-resistance of 26 m½ at a 4.5V gate drive and ESD protection up to 3 kV.A dual p-channel device, the Si7901EDN offers an on-resistance of 48 m½ at a -4.5V gate drive with ESD protection up to 4.5 kV. The Si7703EDN and Si7705DN single p-channel MOSFETs integrate a Schottky diode, making them suitable for battery-charger switching assignments. Both devices have an on-resistance of 48 m½ at a -4.5V gate drive. The Schottky diode has a forward voltage of 0.48V at 0.5A with a reverse voltage of 20V and a forward current of 1A averge. Pricing ranges from $0.44 to $0.54 each/100K. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (610) 644-1300.
Company: VISHAY INTERTECHNOLOGY INC
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