Designed to serve as an output stage in power amplifiers, the NES1720P-140 partially matched, twin transistor L-Band GaAs MESFET delivers 140W of output power. The device also delivers 200 MHz of instantaneous bandwidth, giving it the ability to serve 1.7, 1.8 and 1.9 GHz applications simultaneously. The device also features high power added efficiency as well as low thermal resistance. Partially matched, the two sides of the twin transistor device can be combined externally in either a balanced or a push-pull configuration. Pricing is $215 each/100.
Company: CALIFORNIA EASTERN LABORATORIES
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