Leveraging trench thin-wafer technology, International Rectifier’s IR66xx series of 600-V trench-gate, field-stop insulated-gate bipolar transistors (IGBTs) deliver low conduction and switching losses optimized for welding applications. The devices come co-packaged with a soft-recovery low QRR diode and offer 8- to 30-kHz switching with a 5-µs short-circuit rating. Other features include a low VCE(ON), high switching frequency, low electromagnetic interference (EMI) to boost reliability, rugged transient performance, and positive temperature coefficient to facilitate paralleling. Maximum junction temperature is 175°C. An IGBT online selection tool can be accessed at http://mypower.irf.com/IGBT.