Electronicdesign 7640 0820npdtir
Electronicdesign 7640 0820npdtir
Electronicdesign 7640 0820npdtir
Electronicdesign 7640 0820npdtir
Electronicdesign 7640 0820npdtir

Ultra-Fast 600-V Trench IGBTs Target Welding Apps

Aug. 20, 2014
Leveraging trench thin-wafer technology, International Rectifier’s IR66xx series of 600-V trench-gate, field-stop insulated-gate bipolar transistors (IGBTs) deliver low conduction and switching losses optimized for welding applications.

Leveraging trench thin-wafer technology, International Rectifier’s IR66xx series of 600-V trench-gate, field-stop insulated-gate bipolar transistors (IGBTs) deliver low conduction and switching losses optimized for welding applications. The devices come co-packaged with a soft-recovery low QRR diode and offer 8- to 30-kHz switching with a 5-µs short-circuit rating. Other features include a low VCE(ON), high switching frequency, low electromagnetic interference (EMI) to boost reliability, rugged transient performance, and positive temperature coefficient to facilitate paralleling. Maximum junction temperature is 175°C. An IGBT online selection tool can be accessed at http://mypower.irf.com/IGBT.

INTERNATIONAL RECTIFIER

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