The design and manufacturing of radio systems can be simplified by selecting a device that supports multiple functions. Mimix Broadband, for example, recently announced an amplifier with low noise bias. This feature makes it suitable as a low-noise amplifier (LNA). Yet it has a power bias that can support LO-buffer and transmit-buffer functionality.
This amplifier, which is identified as 28LN3UA0102, can serve as both a LO driver or buffer amplifier. It is well suited for wireless-communications applications like millimeter-wave point-to-point radio, local multipoint distribution services (LMDSs), SATCOM, and radar. This gallium-arsenide (GaAs), monolithic-microwave integrated-circuit (MMIC), three-stage buffer amplifier flaunts ultra-wide bandwidth and high dynamic range.
To cover the 18-to-38-GHz frequency bands, this buffer amplifier uses a 0.15-µm gate-length, GaAs, pseudomorphic high-electron-mobility-transistor (pHEMT) device-model technology. It operates at 3.5 or 5.5 V. To optimize performance, the device also can operate with all three stages biased in parallel or with independent bias for the input and output stages.
This MMIC device has a small signal gain of 20 dB with a noise figure of 3.5 dB across the band. It has 10-dBm OP1dB at low noise bias. At power bias, it can provide 14-dBm OP1dB.
The company performs 100% on-wafer RF, DC, and noise-figure testing on the 28LN3UA0102. It also completes 100% visual inspection to MIL-STD-883 method 2010. The chip has surface passivation for protection. To allow either a conductive epoxy or eutectic solder die-attach process, this passivation provides a rugged part with backside via holes and gold metallization.
Engineering samples are available from stock. Production quantities are available six to eight weeks ARO.
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