EE Product News

1.2-kV IGBT Modules Raise Performance Bar

The IGBT-7 series of 1.2-kV IGBT power modules relies on injection enhanced gate transistor (IEGT) process technology to yield lower saturation voltage, a wide safe operating area, higher operating frequencies, and higher reliability than previous offerings. This new and unique manufacturing process reportedly achieves the best features of conventional gate turn-off (GTO) thyristors and IGBTs. Nine modules in the series provide current ratings from 50A for the MG50Q2YS71 to 600A for the MG600Q1US71. The modules also employ a new ultra-thin punch-through (UTPT) trench structure, said to be responsible for a 25% lower switching time turn-off loss than the company's earlier IGBT Plus and Thin NPT-Planar IGBT devices. A new silicone nitride substrate material also reduces thermal resistance by 10%. The nine modules in the series are available in four industry-standard package types, designated A through D. Sample quantities of the 150A MG150Q2YS71 are available now, priced at $47 each. Samples of the remaining modules will be available in the first or second quarter of 2004, with prices ranging from $22 to $84 each. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (949) 455-2000.


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