LDMOS Power Transistor Delivers 60-W Output
The UPF18060 discrete RF power transistor is designed with UltraGOLDII, LDMOS technology for reliable performance. It serves as a drop-in replacement for the company's MRF18060.
The device's minimum power-output level is 60 W. It may be dropped into existing power-amplifier designs with no matching changes required. This facilitates easy insertion into DCS basestation power-amp designs. According to the company, it suits CDMA, TDMA, GSM, and multicarrier power amps in Class A or Class AB operation.
For pricing and availability information, contact the company.
UltraRF, 160 Gibraltar Ct., Sunnyvale, CA 94089; (408) 745-5700; www.ultrarf.com.
SMPS Series IGBTs Address 24x7 Power-Supply Demands
The switch-mode power-supply (SMPS) series of insulated-gate bipolar transistors (IGBTs) is designed to increase power efficiency in the phase-shifted bridge topology, which is the dominant power-supply architecture in the telecommunications industry. It addresses the 24x7 power-supply demands of telecommunication network infrastructures.
The SMPS IGBTs increase efficiency by eliminating switching losses associated with slow turn-off times, allowing the devices to be implemented in high-speed switching applications. The devices also are capable of high-speed switching in uninterruptible power-supply (UPS) and soft-switched applications. Lowering the gate-charge parameter by 60%, the devices reduce delay times as well as stress on gate-drive circuits. They operate at five times the current density of standard high-voltage MOSFETs, the alternative devices in high-speed switching.
A stealth diode is integrated into the SMPS II IGBTs to improve the telecom switches and servers that make up the Internet's infrastructure by reducing turn-on power losses. Pricing ranges from $1.89 to $10.58, based on packaging options.
Intersil, 7585 Irvine Center Dr., Ste. 100, Irvine, CA 92618; (949) 341-7100; fax (949) 341-7108; www.intersil.com.
Si PIN Photodiodes Suit High-Speed Optical Communications Systems
The S7861/S7861-02 Si PIN photodiodes feature wide dynamic ranges and fast data-transfer rates. According to the company, the devices suit high-speed optical communications systems, such as Fibre Channel and Gigabit Ethernet.
The TO-18 package houses a high-speed, high-sensitivity PIN photodiode integrated with a fast transimpedance amplifier. The device has a dynamic range of −21 to 3 dBm and a data rate of 1.25 Gbits/s. Both photodiodes have an active area of φ0.2 mm and a photosensitivity of 1.0 V/mW. Typical rise time is 300 ps. Both have a circumference of φ5.4 mm. While the housing of the S7861 measures 3.65 mm high, that of the S7861-02 measures 3.8 mm high. The S7861-02 has a lens over the window for efficient and easy coupling to an optical fiber.
In OEM quantities, both photodiodes cost $14 each.
Hamamatsu Corp., 360 Foothill Rd., P.O. 6910, Bridgewater, NJ 08807-0910; (908) 231-0960; fax (908) 231-1218; Internet: http://usa.hamamatsu.com.
GaAs Discrete Transistors Fit BWLL Basestation Amplifier Applications
The MRFG35010 is a 3.5-GHz, 10-W gallium-arsenide (GaAs) discrete transistor available in a bolt-down, non-hermetic package. It functions as a driver stage in a broadband wireless local loop (BWLL) basestation amplifier.
This device is a GaAs pseudomorphic high electron mobility transistor (PHEMT) for broadband wireless access infrastructure applications in the S-band frequency range. This device operates at 12 V. The use of a nonhermetic package has been validated by performing a highly accelerated stress and temperature test on bare GaAs die under normal operating voltages.
In low-volume quantities, the MRFG35010 costs $75 each.
Motorola Inc., 3102 North 56th St., Phoenix, AZ 35018; (602) 952-3000; www.motorola.com/semiconductors.