EE Product News

Insulated Gate Bipolar Transistor Family Expands

Extending the GenX3TM IGBT family to 600V, three additions are now available in three sub-classes denoted A3, B3, and C3. The classifications allow designers to dial in the best compromise between static (conduction) and dynamic (switching) losses to balance critical requirements such as switching frequency, efficiency, and cost structure. The recent additions employ the company’s Punch-Through technology, which provides for higher surge current capabilities, lower saturation voltage, and lower switching losses. They are also available co-packed with HiPerFRED and SONIC ultra-fast diodes to further improve power switching performance. The square reverse bias safe operating area (RBSOA) in the 600V GenX3TM IGBT allows the device to safely operate in snubberless hard switching applications. These devices are also available in ISOPLUSTM packaging, providing an isolation capability up to 2.5 kV. For more details, call IXYS POWER, Milpitas, CA. (408) 457-9000.


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