EE Product News

N-Channel MOSFETs Boost ESD Protection

The FDS881XNZ series n-channel MOSFETs provide up to 8 kV of ESD (HBM) protection, said to be 90% higher than comparable devices on the market. They support the latest architectures for battery-pack protection applications, i.e., as notebook and cell phones, and employ the company’s Power Trench process to specify an on resistance of less than 5W for two devices in the series. The FDS8813NZ, with an on resistance of 4.5 mW, targets all-in-one laptops with displays over 15", while the FDS8817NZ at 7 mW is suitable for general use in low- to mid-tier models and sub-notebook PCs. Additionally, the FDS8812NZ lowers on resistance to 4 mW. Prices range from $0.75 to $1.18 each/1,000. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (800) 341-0392.


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TAGS: Components
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