EE Product News

Power FETs Employ Next-Gen Process Technology

The Q2-Class HiPerFET power MOSFETs tap the company's second-generation HiPerFET process technology that reportedly reduces both gate charge and gate resistance. Compared to prior generation devices, gate charge has been reduced by 25% and gate resistance has been cut by a factor of 100. Via reductions in wafer thickness, thermal impedance has been reduced by 30%. Devices are available rated for voltages from 500V to 1.2 kV and current ratings from 14A to 80A in packages that include TO-247, PLUS247, ISOPLUS247, TO-264, PLUS 246, and SOT-227. The latest devices include the IXFH36N55Q2 rated at 550V and 36A with an on-resistance of 160 milohms and a QG of 105 nC. The IXFH14N1000Q2 rated at 1 kV and 14A with an on-resistance of 900 milohms and a QG of 82 nC is also available. IXYS CORP., Santa Clara, CA. (408) 982-0700.

Company: IXYS CORP.

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