EE Product News

Power MOSFET In Chipscale Package Features Backside Insulation

Strutting in as the first TrenchFET power MOSFET in a chipscale MICRO FOOT package to feature backside insulation, the Si8422DB suits power amplifier, battery, and load-switching applications in portable products. Its 2-mil backside coating insulates the top of the package, preventing shorts resulting from temporary contact with moving parts. The 20V, n-channel Si8422DB exhibits a 1.55 mm x 1.55 mm footprint with a 0.64 mm profile. The device specifies an on-resistance range from 0.043 Ohm at 1.8V VGS to 0.037 Ohm at 4.5V VGS with a maximum gate-source voltage of +/18V. Pricing for the Si8422DB starts at $0.20 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.


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