Electronic Design
Power MOSFET Reduces On-Resistance By 32%

Power MOSFET Reduces On-Resistance By 32%

The SiA975DJ dual 12V p-channel TrenchFET Gen III power MOSFET is said to achieve the lowest on-resistance for a dual p-channel device in a thermally enhanced PowerPAK SC-70 measuring 2 mm x 2 mm. On-resistance is 41 m? at 4.5V, 60 m? at 2.5V, and 110 m? at 1.8V. Reportedly, the closest competing MOSFET is a 20V p-channel device with an 8V gate-to-source rating and which features an on-resistance of 60 m? at a 4.5V gate drive and 80 m? at 2.5 V. These values are 32 % and 25 % higher, respectively, than the SiA975DJ. Pricing for the SiA975DJ starts at $0.15 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.


Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.