EE Product News

Power MOSFETs Lower Thermal Resistance

Specifying the same 3W maximum power dissipation as larger SO-8 devices, the company's latest p-channel power MOSFETs in PowerPAK ChipFET packages measuring 3 mm x 1.8 mm x 0.8 mm feature 75% lower thermal resistance values, a 33% smaller footprint area, and a 23% thinner height profile than their SO-8 counterparts. The seven devices include single, dual, and single with Schottky diode power MOSFETs with breakdown voltage ratings of 12V and 20V. Single p-channel power MOSFETs in the group are rated for typical thermal resistance values as low as 3°C/W with maximum on-resistance values as low as 0.021W in a 20V drain-to-source p-channel single-channel device and 0.064W in a dual-channel device. Pricing starts at $0.20 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.


Product URL: Click here for more information

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.