A 28-V, 5-W class high electron mobility transistor (HEMT) from Nitronex now operates at frequencies that fall between 5.1 GHz to 5.2 GHz and 5.7 GHz to 5.8 GHz. The NPTB00004 gallium nitride on silicon (GaN-on-Si) RF power transistors can produce 27 dBm (400mW) average output power at 2% EVM in 5.2-GHz WiMAX systems, and 28 dBm (630mW) average output power at 2% EVM in 5.8-GHz WiMAX systems. All NPTB00004 transistors are are lead-free and RoHS compliant. They come housed in a plastic over-molded PO150S package with an exposed thermal pad. Samples and application boards are available. Typical pricing is $9 each in quantities of 1000, with a lead time from stock to 10 weeks. NITRONEX, Durham, NC. (919) 807-9100.
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