Trench MOSFETs Exhibit Low On-Resistance

Nov. 1, 2001
Designed to minimize losses and boost circuit efficiency, five SOT23-6 trench MOSFETS exhibit very low on-resistance and low gate charge. As an example, the 20-V ZXMN-2A03E6 has an on resistance of 55 m½ for a gate drive of 4.5V and a continuous

Designed to minimize losses and boost circuit efficiency, five SOT23-6 trench MOSFETS exhibit very low on-resistance and low gate charge. As an example, the 20-V ZXMN-2A03E6 has an on resistance of 55 m½ for a gate drive of 4.5V and a continuous drain current of 4.5A dc. Typical gate charge is 8.6 nC. The 30V ZXMN-3A03E6 provides an on-resistance of 50 m½ for a gate drive of 10V and a gate charge of 12.6 nC. Price for either the 20V or 30V device is $0.33 each/1,000. For further information, call Neil Chadderton at ZETEX INC., Hauppauge, NY. (631) 360-2222.

Company: ZETEX, INC.

Product URL: Click here for more information

Sponsored Recommendations

Highly Integrated 20A Digital Power Module for High Current Applications

March 20, 2024
Renesas latest power module delivers the highest efficiency (up to 94% peak) and fast time-to-market solution in an extremely small footprint. The RRM12120 is ideal for space...

Empowering Innovation: Your Power Partner for Tomorrow's Challenges

March 20, 2024
Discover how innovation, quality, and reliability are embedded into every aspect of Renesas' power products.

Article: Meeting the challenges of power conversion in e-bikes

March 18, 2024
Managing electrical noise in a compact and lightweight vehicle is a perpetual obstacle

Power modules provide high-efficiency conversion between 400V and 800V systems for electric vehicles

March 18, 2024
Porsche, Hyundai and GMC all are converting 400 – 800V today in very different ways. Learn more about how power modules stack up to these discrete designs.

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!