EE Product News

Vishay’s Power MOSFETs Drive Down On-Resistance

Adding to the PolarPAK family of power MOSFETs with double-sided cooling are n-channel 20V, 30V, and 40V devices that tout up to 48% better on-resistance and 12% better on-resistance-times-gate-charge performance when compared to similar MOSFETs with double-sided cooling. This translates into lower conduction and switching losses that reduce power consumption in end systems. The devices share the same footprint area as a standard SO-8, while being twice as thin with a height profile of 0.8 mm. On-resistance for the 20V SiE810DF and SiE808DF, 30V SiE806DF, and 40V SiE812DF ranges from 1.4 mO to 2.6 mO. Their on-resistance-times-gate-charge figures of merit are 127.5 (30V) and 135.2, (40V). Samples and production quantities of the MOSFETs are available now with prices starting at $1.50 each/100,000. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (408) 567-8347.


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