EE Product News

100-V MOSFET Boasts Excellent Figure Of Merit

The FDMS86101 100-V MOSFET uses the company’s advanced PowerTrench process, which minimizes on-state resistance and offers an excellent figure of merit while maintaining superior switching performance and ruggedness. The proprietary process provides the lowest RDS(ON)—8 mO—compared to current devices with the same gate charge, according to the company. This allows the MOSFET to improve conduction losses without suffering the penalty of a higher gate charge. The FDMS86101 integrates a built-in enhanced soft-body diode that lowers switching noise and decreases the application’s susceptibility to electromagnetic interference. This feature saves board space and reduces component count because many alternative solutions need to include a snubber network to cut switching noise spikes. FDMS86101 samples are available now. The MOSFET costs $1.55 each in quantities of 1000. Delivery is in eight to 10 weeks. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (408) 398-9700.


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