EE Product News

TSOP-6 Dual FETs Save Board Space

Packing two P-channel HEXFET power MOSFETs in a single TSOP-6 package, the IRF5810 cuts parts count and footprint area by half compared to TSOP-6s containing a single FET. It also slashes on-resistance by 40% compared to competitive dual MOSFETs in a TSOP-6 packageÑeach IRF5810 FET has a RDS(on) of 90 m½. The device is said to employ an innovative, extended leadframe to maximize the size of each die in the TSOP-6, thereby increasing the deviceÕs current carrying capability and on-state efficiency. Particularly well suited for use in load and battery management circuits in portable products, the IRF5810 is priced at $0.35 each/10,000. INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 252-7105.


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